Material: multicrystalline siliconGrowth Method: CastingType/ dopant: P-type/ Boron dopedResistivity: 0.5 – 3.0 WcmOxygen contentï¼Âï¿¡ 1.0 x 1018 atoms/cm3Carbon contentï¼Âï¿¡ 5.0 x 1016 atoms/cm3Effective life timeï¼Â3 2 microsecondSide sizeï¼Âsquare 156 mm ± 0.5 mmSide Angleï¼Â90° ± 0.25°Wafer thicknessï¼Â200 μm ± 20 μm and thickerBowï¼Âï¿¡ 75 μmTTVï¼Âï¿¡ 50 μmSaw damageï¼Âï¿¡ 15 μmSurfaceï¼Âas cut, clean, free from stains, no cracksDiameterï¼Â219.21±1.0mmCrack and Pinholeï¼ÂNo cracks and pinholes visible with naked eyesEdge Defectï¼ÂDepth<1mm, Length<1.5mm,less than 2 placesCorner Defectï¼ÂDepth<1.5mm, Length<1.5mm, less than 2 placesBevel edge angleï¼Â45 ± 10?